Power amplifer 7W power output 400-470MHz use for radio, RF products RA07H4047M manufacturer from China Shenzhen KYL Communication Equipment Co., Ltd

Payment Terms:	T/T,WU
Place of Origin:	Guangdong, China (Mainland)

Product Detail

Model No.: RA07H4047M

Production Capacity: 6000

Delivery Date: 3-6 days

Power output: 7W

Means of Transport: Air

Packing: standard

Brand Name: MITSUBISHI

frequency: 400-470MHz

1. MITSUBISHI RF Power Module Amplifier
2. Frequency Range: 400-470MHz
3. Output Power: 7W
4. Size: 30 x 10 x 5.4 mm

RA07H4047M

Detailed Product Description
1. MITSUBISHI RF Power Module Amplifier
2. Frequency Range: 400-470MHz
3. Output Power: 7W
4. Size: 30 x 10 x 5.4 mm

Silicon RF Power Semiconductors
High Frequency Devices

12.5V Operation High Output Power MOS FET Modules
Si RF Power Module Amplifier
UHF 300-500MHz / Low Power

Low Output Power Si RF Module MOSFET

FEATURES

1	Enhancement- Mode MOSFET Transistors (IDD ≅ 0 @ VDD = 12.5V , VGG = 0V)
2	Pout > 7W @ VDD = 12.5V , VGG = 3.5V , Pin = 20mW
3	ηT > 40% @ Pout = 7W (VGG control) , VDD = 12.5V , Pin = 20mW
4	Broadband Frequency Range: 400-470MHz
5	Low-Power Control Current IGG = 1mA (typ) at VGG = 3.5V
6	Module Size: 30 x 10 x 5.4 mm
7	Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power