Power amplifer 30W 400MHz-470MHz PA Orignal PA Cost Effective RA30H4047M manufacturer from China Shenzhen KYL Communication Equipment Co., Ltd

Payment Terms:	T/T,WU
Place of Origin:	Guangdong, China (Mainland)

Product Detail

Model No.: RA30H4047M

Production Capacity: 6000

Delivery Date: 3-6 days

Power output: 30W

Means of Transport: Air

Packing: standard

Brand Name: MITSUBISHI

frequency: 400-470MHz

1. MITSUBISHI MOSFET Amplifier RF Power Module
2. Frequency Range: 400-470MHz
3. Output Power: 30W
4. Module Size: 66 x 21 x 9.88 mm

RA30H4047M

Detailed Product Description

1. MITSUBISHI MOSFET Amplifier RF Power Module
2. Frequency Range: 400-470MHz
3. Output Power: 30W
4. Module Size: 66 x 21 x 9.88 mm

Silicon RF Power Semiconductors

High Frequency Devices

Si RF Power Module

High Output Power Si MOS FET Module

FEATURES

1	Enhancement- Mode MOSFET Transistors (IDD ≅ 0 @ VDD = 12.5V , VGG = 0V)
2	Pout > 30W , ηT > 40% @ VDD = 12.5V , VGG = 5V , Pin = 50mW
3	Broadband Frequency Range: 400-470MHz
4	Low-Power Control Current IGG = 1mA (typ) at VGG = 5V
5	Module Size: 66 x 21 x 9.88 mm
6	Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power