30W power amplifer Original PA RA30H1317M manufacturer from China Shenzhen KYL Communication Equipment Co., Ltd

Payment Terms:	T/T,WU
Place of Origin:	Guangdong, China (Mainland)

Product Detail

Model No.: RA30H1317M

Production Capacity: 6000

Delivery Date: 3-6 days

Means of Transport: Air,Air

Packing: standard

Brand Name: MITSUBISHI

1. MITSUBISHI RF MOSFET Power Module
2. Frequency Range: 135-175MHz
3. Output Power: 30W
4. Module Size: 66 x 21 x 9.88 mm

Silicon RF Power Semiconductors
High Frequency Devices
RF MOSFET Power Module
High Output Power Si MOSFET Module

VHF 50-300MHz / High Power

FEATURES

1	Enhancement- Mode MOSFET Transistors (IDD ≅ 0 @ VDD = 12.5V , VGG = 0V)
2	Pout > 30W , ηT > 40% @ VDD = 12.5V , VGG = 5V , Pin = 50mW
3	Broadband Frequency Range: 135-175MHz
4	Low-Power Control Current IGG=1mA (typ) at VGG = 5V
5	Module Size: 66 x 21 x 9.88 mm
6	Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power